The two-dimensional semiconductor quasi-non-volatile storage prototype device developed by the Fudan team achieves a writing speed of 10 nanoseconds, which is 10,000 times faster than current USB drives and 156 times faster than existing memory technology. What makes this breakthrough truly revolutionary is its adjustable data quasi-non-volatile characteristics: users can customize the data retention period from 10 seconds to 10 years, depending on their needs. This means that the device can function as both a high-speed memory (for temporary data processing) and a non-volatile storage (for long-term data retention), solving the long-standing contradiction between speed and data persistence. The core of this breakthrough lies in the innovative combination of two-dimensional materials. Unlike traditional three-dimensional materials, two-dimensional materials have a single-layer atomic structure, which gives them unique electrical, optical, and mechanical properties. The Fudan team adopted a stack of multiple two-dimensional materials to form a semi-floating gate structure transistor: molybdenum disulfide (MoS2) is used for charge transport, tungsten diselenide (WSe2) for charge storage, hafnium disulfide (HfS2) for switching, and boron nitride (h-BN) as a tunneling layer. This structure forms a van der Waals heterojunction with a stepped energy valley, which allows for precise control of electron flow—part of the material acts as a “door” that lets electrons enter easily but not exit, while the other part acts as a “wall” that traps electrons for long-term storage. This unique design not only achieves high speed and adjustable non-volatility but also offers significant advantages in energy efficiency and integration. The device consumes 90% less power than traditional storage devices, making it ideal for battery-powered devices like smartphones and wearables. Additionally, the atomic-level thickness of two-dimensional materials allows for higher integration density—future versions of the device could be integrated into chips at a density 10 times higher than current flash memory, enabling smaller, more powerful electronic devices. The commercialization path of this technology is already taking shape, with a clear roadmap from laboratory prototype to mass production. According to recent updates, a pilot production line in Shaoxing, built by a technology transfer company from Fudan University, is now 70% complete and expected to deliver experimental facilities by the second half of 2026. This pilot line aims to scale the storage capacity from the laboratory’s 1K-bit level to KB and eventually MB levels in real-world production environments. Following the pilot phase (2026-2028), the technology will enter small-scale mass production (2028-2030), with chip costs expected to drop to within 150% of traditional high-end flash memory. By 2030 and beyond, large-scale application is targeted, with GB-level integration and a potential 20% share of the global non-volatile memory market. This breakthrough builds on earlier advancements in 2D semiconductor storage, such as the “POX” 2D flash memory device developed by a team from Shaoxin Laboratory, which achieved an ultrafast storage speed of 400 picoseconds—a record published in Nature. The Shaoxin team later developed the world’s first fully functional hybrid-architecture 2D flash memory chip, “Changying (CY-01)”, which supports 8-bit instruction operations and 32-bit high-speed parallel operations with an integration yield of 94.3%, further validating the potential of 2D materials in storage technology. The commercial prospects of this new storage technology are extremely broad. In the field of ultra-low power high-speed storage, it can greatly reduce the energy consumption of data centers and high-end servers, which are major contributors to global energy use. For example, a data center using this technology could reduce its energy consumption by 40% or more, significantly lowering operational costs and carbon emissions. In the field of data security, the adjustable data validity period makes it ideal for sensitive scenarios such as military, finance, and government, where data needs to be automatically destroyed after a certain period to prevent leakage. In the consumer electronics market, devices equipped with this technology will offer faster storage speeds and longer battery life. Imagine a smartphone that can transfer a 4K movie in 1 second or a laptop that boots up in milliseconds—these are just a few of the possibilities. The technology also has applications in the Internet of Things (IoT), where low-power, high-speed storage is essential for connected devices like sensors and smart home appliances. Of course, there are still challenges to overcome before widespread commercialization. The large-scale synthesis of high-quality two-dimensional materials remains a technical hurdle, as even small defects can affect the performance of the storage device. Additionally, integrating the new storage technology with existing semiconductor manufacturing processes will require further research and development. However, with the support of government funding, industry partnerships, and ongoing research, these challenges are likely to be addressed in the coming years. The birth of this third type of storage technology marks a major milestone in the semiconductor industry. It not only breaks the long-standing trade-off between speed and data persistence but also opens up new possibilities for the development of faster, more efficient, and more energy-saving electronic devices. As the technology matures and scales, it will rewrite the rules of the storage industry, driving a new round of innovation in the computer hardware sector and beyond.
